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silicon nanophotonic wire

Electrically pumped InP-based microdisk lasers integrated …

28/5/2007· A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabried through heterogeneous integration of InP on silicon-on-insulator (SOI).

Silicon microring resonators — Eindhoven University of …

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabriion processes.

Linear and Nonlinear Nanophotonic Devices Based on Silicon-on …

photonic functions in silicon-wire like devices have seen a great rise of interest over the last years, and devices such as high-speed modulators have been demonstrated.1) However, the possible appliion fields of passive SOI nanophotonic technology are

Silicon nanophotonic wire structures fabried by 193nm …

We demonstrate the use of 193 nm optical lithography for fabriing nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabriion and measurement result on wire

OSA | Self-phase modulation and nonlinear loss in silicon …

This Si nanophotonic wire has a power confinement κ of 92% at 1550 nm, and, since the mode expands at longer wavelengths, the power confinement drops to 75% at 2200 nm.

Silicon nanophotonic wire structures fabried by 193nm optical …

lithography for fabriing nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabriion and measurement result on wire devices. We report a propagation loss of 2.8dB/cm for 450X220nm photonic wire. I. INTRODUCTION Much of

An octave-spanning mid-infrared frequency co …

An octave-spanning mid-infrared frequency co generated in a silicon nanophotonic wire waveguide

An octave spanning mid-infrared frequency co generated in a …

region has attracted significant interest. Silicon nanophotonic wire waveguides can be engineered [14] within a nanometer precision in a standard CMOS facility. Such waveguides offer many advantages for mid-infrared nonlinear optics, mostly related to the

Universiteit Gent - exceeding 50 dB, using mid-infrared …

The silicon nanophotonic wire was fabried on a 200 mm silicon-on-insulator (SOI) wafer in a CMOS pilot line at Ghent University-IMEC. It has cross-sectional dimensions of w= 900 nm by h = 220 nm (inset Fig. 1a), and is 2 cm in length. The cladding consists

OSA | Engineering nonlinearities in nanoscale optical …

Engineering nonlinearities in nanoscale optical systems: physics and appliions in dispersion-engineered silicon nanophotonic wires R. M. Osgood, N. C. Panoiu, J. I. Dadap, Xiaoping Liu, Xiaogang Chen, I-Wei Hsieh, E. Dulkeith, W. M.J. Green, and Y. A. Vlasov

Loss reduction in silicon nanophotonic waveguide micro …

15/4/2011· Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance.

OSA | Self-phase modulation and nonlinear loss in …

We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm.

Silicon nanophotonic wire structures fabried by …

By Shankar Kumar Selvaraja, Patrick Jaenen, Stephan Beckx, Wim Bogaert, Pieter Dumon, Dries Van Thourout and Roel Bates

Silicon nanophotonic wire structures fabried by …

By Shankar Kumar Selvaraja, Patrick Jaenen, Stephan Beckx, Wim Bogaert, Pieter Dumon, Dries Van Thourout and Roel Bates

Self-phase modulation and nonlinear loss in silicon nanophotonic …

silicon nanophotonic wires near the mid-infrared two-photon absorption edge Xiaoping Liu, 1,* Jeffrey B. Driscoll, 1 Jerry I. Dadap, 1 and Richard M. Osgood Jr.,

Observation of optically induced transparency effect …

(a) Schematic illustration of silicon nanophotonic wires covered by patterned graphene. The probe light is coupled into and out of the silicon nanophotonic wire through grating couplers. The pump light is emitted through a fiber on top of the silicon nanophotonic

Mid-infrared frequency co via coherent dispersive …

16/4/2018· Kuyken, B. et al. An octave-spanning mid-infrared frequency co generated in a silicon nanophotonic wire waveguide. Nat. Commun. 6, 6310 (2015). Article Google Scholar 27.

Loss reduction in silicon nanophotonic waveguide micro …

15/4/2011· Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance.

An octave-spanning mid-infrared frequency co generated in a …

of the silicon photonic wire. The 1-cm-long air-clad photonic wire has a rectangular cross-section of 1,600nm 390nm. The waveguide is slightly over etched by 10nm into the buried oxide. The photonic wire widens near the cleaved facets to a 3-mm wide waveguide

Nonlinear Mid-IR Photonics using Silicon Nanophotonic Wires

In recent years, various third-order nonlinear effects in silicon nanophotonic wires have been studied [17-20]. In these studies it has been shown that the nonlinear efficiency in the telecom band is largely suppressed by the optical limiting effect due to silicon ’s

Nonlinear Appliions using Silicon Nanophotonic …

This gain achieved with only a 4-mm-long silicon nanophotonic wire is sufficient enough to overcome all the insertion loss, resulting in 13 dB net off-chip amplifiion. In addition, I show, on the same waveguide, efficient generation of 4 orders of cascaded FWM products enabled by the large on-chip gain.

An octave-spanning mid-infrared frequency co …

An octave-spanning mid-infrared frequency co generated in a silicon nanophotonic wire waveguide

Silicon nanophotonic wire structures fabried by …

We demonstrate the use of 193 nm optical lithography for fabriing nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabriion and measurement result on wire

Silicon nanophotonic wire structures fabried by …

We demonstrate the use of 193nm optical lithography for fabriing nanophotonic wire structures on sificon-on-insulator (SOI) technology. We present fabriion and measurement result on wire devices. We report a propagation loss of 2.8dB/cm for 450X220nm

An octave-spanning mid-infrared frequency co …

20/2/2015· The photonic wire is fabried in a CMOS pilot line 17 on a 200-mm silicon-on-insulator (SOI) wafer and consisting of a 390-nm-thick silicon device layer on top of a 2-μm buried oxide layer.

(PDF) Silicon nanophotonic wire structures fabried by …

Silicon nanophotonic wire structures fabried by 193nm optical lithography Diedrik Vermeulen I. INTRODUCTIONMuch of the photonic research revolves around E-beam lithography for fabriion photonic circuits on SOI technology.

Self-phase modulation and nonlinear loss in silicon …

11/4/2011· Self-phase modulation and nonlinear loss in silicon nanophotonic wires near the mid-infrared two-photon absorption edge. Liu X(1), Driscoll JB, Dadap JI, Osgood RM Jr, Assefa S, Vlasov YA, Green WM. Author information: (1)Department of Electrical Engineering, Coluia University, 1300 S. W. Mudd Building, 500 W. 120th Street, New York, NY 10027, USA. [email protected]

Frequency conversion of mid-infrared optical signals into the telecom band using nonlinear silicon nanophotonic …

silicon nanophotonic wire, and results in a spectral shift of the discrete bands where phase matching is obtained. The spectral separation of the bands becomes larger with increasing |β2| and decreasing |β4|. The data illustrates that the discrete bands move